Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 8,427
| Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF7809AVTRPBF Infineon Technologies | 1 $1.4400 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62 nC @ 5 V | ±12V | 3780 pF @ 16 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) | 3,441 Cart + RFQ |
IPA65R225C7 Infineon Technologies | 1 $1.4500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-111 | TO-220-3 Full Pack | 6,411 Cart + RFQ |
IPD65R400CEAUMA1 Infineon Technologies | 1 $1.4500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 650 V | 15.1A (Tc) | 10V | 400mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | Super Junction | 118W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2,733 Cart + RFQ |
IRFR1205TRPBF Infineon Technologies | 1 $1.1540 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 55 V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100,000 Cart + RFQ |
IRF9530NSTRLPBF Infineon Technologies | 1 $0.6836 100 $0.5468 500 $0.4557 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 1,200 Cart + RFQ |
AUIRL1404ZS Infineon Technologies | 1 $1.5600 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 8,548 Cart + RFQ |
IPI60R250CP Infineon Technologies | 1 $1.5700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 35 nC @ 10 V | ±20V | 1200 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | 6,140 Cart + RFQ |
SP000681054 Infineon Technologies | 1 $1.6300 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3,897 Cart + RFQ |
IPB03N03LB G Infineon Technologies | 1 $1.6300 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 55A, 10V | 2V @ 100µA | 59 nC @ 5 V | ±20V | 7624 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 5,206 Cart + RFQ |
IPD95R2K0P7ATMA1 Infineon Technologies | 1 $1.6400 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 950 V | 4A (Tc) | 10V | 2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10 nC @ 10 V | ±20V | 330 pF @ 400 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2,396 Cart + RFQ |
SPD18P06PGBTMA1 Infineon Technologies | 1 $1.6700 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 60 V | 18.6A (Tc) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 33 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6,464 Cart + RFQ |
IPA65R190C7 Infineon Technologies | 1 $1.6700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack | 8,129 Cart + RFQ |
BSO040N03MSGXUMA1 Infineon Technologies | 1 $1.7200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2V @ 250µA | 73 nC @ 10 V | ±20V | 5700 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) | 4,507 Cart + RFQ |
IRFZ48NSTRLPBF Infineon Technologies | 1 $1.8200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 7,109 Cart + RFQ |
IPD60R280PFD7SAUMA1 Infineon Technologies | 1 $1.8600 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 15.3 nC @ 10 V | ±20V | 656 pF @ 400 V | - | 51W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-344 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8,188 Cart + RFQ |
IRF6620TRPBF Infineon Technologies | 1 $1.8700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 20 V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.7mOhm @ 27A, 10V | 2.45V @ 250µA | 42 nC @ 4.5 V | ±20V | 4130 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX | 8,783 Cart + RFQ |
BSO201SPHXUMA1 Infineon Technologies | 1 $1.8800 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 2.5V, 4.5V | 8mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 88 nC @ 4.5 V | ±12V | 9600 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) | 1,400 Cart + RFQ |
BSC026N04LSATMA1 Infineon Technologies | 1 $3.7716 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 50A, 10V | 2V @ 250µA | 32 nC @ 10 V | ±20V | 2300 pF @ 20 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN | 100,000 Cart + RFQ |
IPD50N06S2L13ATMA2 Infineon Technologies | 1 $1.9200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 55 V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 34A, 10V | 2V @ 80µA | 69 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1,557 Cart + RFQ |
IPI65R190C6XKSA1 Infineon Technologies | 1 $1.9300 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | 9,930 Cart + RFQ |