Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 6
Product | Pricing | Datasheet | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GE12047CCA3 General Electric | 1 $1.0000 | Datasheet | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 475A | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1248nC @ 18V | 29300pF @ 600V | 1250W | -55°C ~ 150°C (Tc) | Chassis Mount | Module | - | 6,378 Cart + RFQ |
GE12047BCA3 General Electric | 1 $1.0000 | Datasheet | 2 Independent | Silicon Carbide (SiC) | 1200V (1.2kV) | 475A | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1248nC @ 18V | 29300pF @ 600V | 1250W | -55°C ~ 150°C (Tc) | Chassis Mount | Module | - | 4,723 Cart + RFQ |
GE17042CCA3 General Electric | 1 $1.0000 | Datasheet | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 425A (Tc) | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 18V | 29100pF @ 900V | 1250W | 175°C (TJ) | Chassis Mount | Module | - | 3,484 Cart + RFQ |
GE17042BCA3 General Electric | 1 $1.0000 | Datasheet | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1700V (1.7kV) | 425A (Tc) | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 18V | 29100pF @ 900V | 1250W | 175°C (TJ) | Chassis Mount | Module | - | 2,252 Cart + RFQ |
GE17080CDA3 General Electric | 1 $2.0000 | Datasheet | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 765A | 2.23mOhm @ 765A, 20V | 4.5V @ 160mA | 2414nC @ 18V | 58000pF @ 900V | 2350W | -55°C ~ 150°C (Tc) | Chassis Mount | Module | - | 8,809 Cart + RFQ |
GE17045EEA3 General Electric | 1 $3.0000 | Datasheet | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 425A (Tc) | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 1207nC @ 18V | 29100pF @ 900V | 1250W (Tc) | -55°C ~ 150°C (Tc) | Chassis Mount | Module | - | 9,288 Cart + RFQ |