Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 6
ProductPricingDatasheetFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
GE12047CCA3
General Electric
1
$1.0000
Datasheet
2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)475A4.4mOhm @ 475A, 20V4.5V @ 160mA1248nC @ 18V29300pF @ 600V1250W-55°C ~ 150°C (Tc)Chassis MountModule-
6,378
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GE12047BCA3
General Electric
1
$1.0000
Datasheet
2 IndependentSilicon Carbide (SiC)1200V (1.2kV)475A4.4mOhm @ 475A, 20V4.5V @ 160mA1248nC @ 18V29300pF @ 600V1250W-55°C ~ 150°C (Tc)Chassis MountModule-
4,723
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GE17042CCA3
General Electric
1
$1.0000
Datasheet
2 N-Channel (Half Bridge)Silicon Carbide (SiC)1700V (1.7kV)425A (Tc)4.45mOhm @ 425A, 20V4.5V @ 160mA18V29100pF @ 900V1250W175°C (TJ)Chassis MountModule-
3,484
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GE17042BCA3
General Electric
1
$1.0000
Datasheet
2 N-Channel (Dual)Silicon Carbide (SiC)1700V (1.7kV)425A (Tc)4.45mOhm @ 425A, 20V4.5V @ 160mA18V29100pF @ 900V1250W175°C (TJ)Chassis MountModule-
2,252
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GE17080CDA3
General Electric
1
$2.0000
Datasheet
2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)765A2.23mOhm @ 765A, 20V4.5V @ 160mA2414nC @ 18V58000pF @ 900V2350W-55°C ~ 150°C (Tc)Chassis MountModule-
8,809
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GE17045EEA3
General Electric
1
$3.0000
Datasheet
6 N-Channel (3-Phase Bridge)Silicon Carbide (SiC)1700V (1.7kV)425A (Tc)4.45mOhm @ 425A, 20V4.5V @ 160mA1207nC @ 18V29100pF @ 900V1250W (Tc)-55°C ~ 150°C (Tc)Chassis MountModule-
9,288
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RFQ