Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 300
ProductPricingDatasheetFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
MSCSM70AM07T3AG
Microchip Technology
1
$299.7300
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)700V353A (Tc)6.4mOhm @ 120A, 20V2.4V @ 12mA645nC @ 20V13500pF @ 700V988W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
7,314
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MSCSM120VR1M16CT3AG
Microchip Technology
1
$307.9000
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)173A (Tc)16mOhm @ 80A, 20V2.8V @ 6mA464nC @ 20V6040pF @ 1000V745W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6,298
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MSCSM120HM31CTBL2NG
Microchip Technology
1
$313.4100
Datasheet
4 N-Channel (Full Bridge)Silicon Carbide (SiC)1200V79A31mOhm @ 40A, 20V2.8V @ 1mA232nC @ 20V3020pF @ 1000V310W-55°C ~ 175°C (TJ)Chassis MountModule-
8,550
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MSCSM120DDUM31CTBL2NG
Microchip Technology
1
$313.4100
Datasheet
4 N-Channel, Common SourceSilicon Carbide (SiC)1200V79A31mOhm @ 40A, 20V2.8V @ 1mA232nC @ 20V3020pF @ 1000V310W-55°C ~ 175°C (TJ)Chassis MountModule-
4,854
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MSCSM120TAM31T3AG
Microchip Technology
1
$324.2500
Datasheet
6 N-Channel (3-Phase Bridge)Silicon Carbide (SiC)1200V (1.2kV)89A (Tc)31mOhm @ 40A, 20V2.8V @ 3mA232nC @ 20V3020pF @ 1000V395W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6,621
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MSCSM120AM11T3AG
Microchip Technology
1
$328.5800
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)254A (Tc)10.4mOhm @ 120A, 20V2.8V @ 9mA696nC @ 20V9060pF @ 1000V1.067kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
8,545
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MSCSM170HM45CT3AG
Microchip Technology
1
$339.0900
Datasheet
4 N-Channel (Full Bridge)Silicon Carbide (SiC)1700V (1.7kV)64A (Tc)45mOhm @ 30A, 20V3.2V @ 2.5mA178nC @ 20V3300pF @ 1000V319W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
3,862
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MSCSM70TLM10C3AG
Microchip Technology
1
$406.4500
Datasheet
4 N-ChannelSilicon Carbide (SiC)700V241A (Tc)9.5mOhm @ 80A, 20V2.4V @ 8mA (Typ)430nC @ 20V9000pF @ 700V690W (Tc)-40°C ~ 175°C (TJ)Through HoleModuleModule
1,674
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MSCSM120DUM08T3AG
Microchip Technology
1
$418.4700
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)337A (Tc)7.8mOhm @ 80A, 20V2.8V @ 4mA928nC @ 20V12100pF @ 1000V1409W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
4,786
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MSCSM120HM16T3AG
Microchip Technology
1
$418.4700
Datasheet
4 N-Channel (Full Bridge)Silicon Carbide (SiC)1200V (1.2kV)173A (Tc)16mOhm @ 80A, 20V2.8V @ 6mA464nC @ 20V6040pF @ 1000V745W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
8,910
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MSCSM120AM08T3AG
Microchip Technology
1
$418.4700
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)337A (Tc)7.8mOhm @ 160A, 20V2.8V @ 12mA928nC @ 20V12100pF @ 1000V1.409kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
2,190
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MSCSM170TLM23C3AG
Microchip Technology
1
$439.3300
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1700V (1.7kV)124A (Tc)22.5mOhm @ 60A, 20V3.2V @ 5mA356nC @ 20V6600pF @ 1000V602W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
1,223
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MSCSM170TAM45CT3AG
Microchip Technology
1
$479.8900
Datasheet
6 N-Channel (3-Phase Bridge)Silicon Carbide (SiC)1700V (1.7kV)64A (Tc)45mOhm @ 30A, 20V3.2V @ 2.5mA178nC @ 20V3300pF @ 1000V319W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
7,544
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MSCSM170AM15CT3AG
Microchip Technology
1
$483.9500
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1700V (1.7kV)181A (Tc)15mOhm @ 90A, 20V3.2V @ 7.5mA534nC @ 20V9900pF @ 1000V862W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6,050
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MSCSM120TLM16C3AG
Microchip Technology
1
$497.4400
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1200V (1.2kV)173A (Tc)16mOhm @ 80A, 20V2.8V @ 2mA464nC @ 20V6040pF @ 1000V745W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
6,620
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MSCSM120HM16TBL3NG
Microchip Technology
1
$546.5900
Datasheet
6 N-Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)150A16mOhm @ 80A, 20V2.8V @ 6mA464nC @ 20V6040pF @ 1000V560W-55°C ~ 175°C (TJ)Chassis MountModule-
4,949
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MSCSM120DDUM16TBL3NG
Microchip Technology
1
$546.5900
Datasheet
4 N-Channel, Common SourceSilicon Carbide (SiC)1200V (1.2kV)150A16mOhm @ 80A, 20V2.8V @ 6mA464nC @ 20V6040pF @ 1000V560W-55°C ~ 175°C (TJ)Chassis MountModule-
3,887
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MSCSM120VR1M11CT6AG
Microchip Technology
1
$602.7200
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)251A (Tc)10.4mOhm @ 120A, 20V2.8V @ 9mA696nC @ 20V9000pF @ 1000V1.042kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
3,586
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MSCSM120HM16CTBL3NG
Microchip Technology
1
$648.0900
Datasheet
4 N-Channel (Phase Leg)Silicon Carbide (SiC)1200V150A16mOhm @ 80A, 20V2.8V @ 2mA464nC @ 20V6040pF @ 1000V560W-55°C ~ 175°C (TJ)Chassis MountModule-
5,272
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MSCSM120DDUM16CTBL3NG
Microchip Technology
1
$648.0900
Datasheet
4 N-Channel, Common SourceSilicon Carbide (SiC)1200V150A16mOhm @ 80A, 20V2.8V @ 2mA464nC @ 20V6040pF @ 1000V560W-55°C ~ 175°C (TJ)Chassis MountModule-
5,600
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RFQ