
Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 300
Product | Pricing | Datasheet | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() MSCSM70AM07T3AG Microchip Technology | 1 $299.7300 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 353A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 988W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 7,314 Cart + RFQ |
![]() MSCSM120VR1M16CT3AG Microchip Technology | 1 $307.9000 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 6,298 Cart + RFQ |
![]() MSCSM120HM31CTBL2NG Microchip Technology | 1 $313.4100 | Datasheet | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 8,550 Cart + RFQ |
![]() MSCSM120DDUM31CTBL2NG Microchip Technology | 1 $313.4100 | Datasheet | 4 N-Channel, Common Source | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 4,854 Cart + RFQ |
![]() MSCSM120TAM31T3AG Microchip Technology | 1 $324.2500 | Datasheet | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 6,621 Cart + RFQ |
![]() MSCSM120AM11T3AG Microchip Technology | 1 $328.5800 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 254A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9060pF @ 1000V | 1.067kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 8,545 Cart + RFQ |
![]() MSCSM170HM45CT3AG Microchip Technology | 1 $339.0900 | Datasheet | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 3,862 Cart + RFQ |
![]() MSCSM70TLM10C3AG Microchip Technology | 1 $406.4500 | Datasheet | 4 N-Channel | Silicon Carbide (SiC) | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA (Typ) | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | Module | Module | 1,674 Cart + RFQ |
![]() MSCSM120DUM08T3AG Microchip Technology | 1 $418.4700 | Datasheet | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 80A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12100pF @ 1000V | 1409W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 4,786 Cart + RFQ |
![]() MSCSM120HM16T3AG Microchip Technology | 1 $418.4700 | Datasheet | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 8,910 Cart + RFQ |
![]() MSCSM120AM08T3AG Microchip Technology | 1 $418.4700 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 12mA | 928nC @ 20V | 12100pF @ 1000V | 1.409kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 2,190 Cart + RFQ |
![]() MSCSM170TLM23C3AG Microchip Technology | 1 $439.3300 | Datasheet | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 1,223 Cart + RFQ |
![]() MSCSM170TAM45CT3AG Microchip Technology | 1 $479.8900 | Datasheet | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 7,544 Cart + RFQ |
![]() MSCSM170AM15CT3AG Microchip Technology | 1 $483.9500 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1700V (1.7kV) | 181A (Tc) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | 862W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 6,050 Cart + RFQ |
![]() MSCSM120TLM16C3AG Microchip Technology | 1 $497.4400 | Datasheet | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 6,620 Cart + RFQ |
![]() MSCSM120HM16TBL3NG Microchip Technology | 1 $546.5900 | Datasheet | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 560W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 4,949 Cart + RFQ |
![]() MSCSM120DDUM16TBL3NG Microchip Technology | 1 $546.5900 | Datasheet | 4 N-Channel, Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 560W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 3,887 Cart + RFQ |
![]() MSCSM120VR1M11CT6AG Microchip Technology | 1 $602.7200 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9000pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 3,586 Cart + RFQ |
![]() MSCSM120HM16CTBL3NG Microchip Technology | 1 $648.0900 | Datasheet | 4 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V | 150A | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 560W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 5,272 Cart + RFQ |
![]() MSCSM120DDUM16CTBL3NG Microchip Technology | 1 $648.0900 | Datasheet | 4 N-Channel, Common Source | Silicon Carbide (SiC) | 1200V | 150A | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 560W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 5,600 Cart + RFQ |