Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 300
ProductPricingDatasheetFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
MSCSM120VR1M31C1AG
Microchip Technology
1
$170.9700
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)89A (Tc)31mOhm @ 40A, 20V2.8V @ 3mA232nC @ 20V3020pF @ 1000V395W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
1,714
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MSCSM120DUM31CTBL1NG
Microchip Technology
1
$175.8400
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V79A31mOhm @ 40A, 20V2.8V @ 1mA232nC @ 20V3020pF @ 1000V310W-55°C ~ 175°C (TJ)Chassis MountModule-
8,000
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MSCSM120AM31CTBL1NG
Microchip Technology
1
$175.8400
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V79A31mOhm @ 40A, 20V2.8V @ 1mA232nC @ 20V3020pF @ 1000V310W-55°C ~ 175°C (TJ)Chassis MountModule-
6,857
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MSCSM120TLM50C3AG
Microchip Technology
1
$180.1800
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1200V (1.2kV)55A (Tc)50mOhm @ 40A, 20V2.7V @ 1mA137nC @ 20V1990pF @ 1000V245W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
6,857
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MSCSM120AM16T1AG
Microchip Technology
1
$191.7200
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)173A (Tc)16mOhm @ 80A, 20V2.8V @ 6mA464nC @ 20V6040pF @ 1000V745W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
5,575
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MSCSM120DHM31CTBL2NG
Microchip Technology
1
$195.9300
Datasheet
2 N-Channel (Dual) AsymmetricalSilicon Carbide (SiC)1200V79A31mOhm @ 40A, 20V2.8V @ 1mA232nC @ 20V3020pF @ 1000V310W-55°C ~ 175°C (TJ)Chassis MountModule-
1,587
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MSCSM170DUM23T3AG
Microchip Technology
1
$200.6100
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)124A (Tc)22.5mOhm @ 60A, 20V3.2V @ 5mA356nC @ 20V6600pF @ 1000V602W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
8,298
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MSCSM70HM19T3AG
Microchip Technology
1
$215.3400
Datasheet
4 N-Channel (Full Bridge)Silicon Carbide (SiC)700V124A (Tc)19mOhm @ 40A, 20V2.4V @ 4mA215nC @ 20V4500pF @ 700V365W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6,857
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MSCSM70AM10T3AG
Microchip Technology
1
$218.2200
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)700V241A (Tc)9.5mOhm @ 80A, 20V2.4V @ 8mA430nC @ 20V9000pF @ 700V690W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
8,392
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MSCSM120HM31T3AG
Microchip Technology
1
$234.5900
Datasheet
4 N-Channel (Full Bridge)Silicon Carbide (SiC)1200V (1.2kV)89A (Tc)31mOhm @ 40A, 20V2.8V @ 3mA232nC @ 20V3020pF @ 1000V395W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
2,387
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MSCSM120DUM16T3AG
Microchip Technology
1
$237.4700
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)173A (Tc)16mOhm @ 80A, 20V2.8V @ 2mA464nC @ 20V6040pF @ 1000V745W (Tc)-55°C ~ 175°C (TJ)Chassis MountModuleSP3F
3,760
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MSCSM70TLM19C3AG
Microchip Technology
1
$241.8000
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)700V124A (Tc)19mOhm @ 40A, 20V2.4V @ 4mA215nC @ 20V4500pF @ 700V365W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
1,639
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MSCSM170TLM45C3AG
Microchip Technology
1
$244.7800
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1700V (1.7kV)64A (Tc)45mOhm @ 30A, 20V3.2V @ 2.5mA178nC @ 20V3300pF @ 1000V319W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
4,916
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MSCSM120HM31TBL2NG
Microchip Technology
1
$260.8800
Datasheet
4 N-Channel (Full Bridge)Silicon Carbide (SiC)1200V (1.2kV)79A31mOhm @ 40A, 20V2.8V @ 3mA232nC @ 20V3020pF @ 1000V310W-55°C ~ 175°C (TJ)Chassis MountModule-
9,663
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MSCSM120DDUM31TBL2NG
Microchip Technology
1
$260.8800
Datasheet
4 N-Channel, Common SourceSilicon Carbide (SiC)1200V (1.2kV)79A31mOhm @ 40A, 20V2.8V @ 3mA232nC @ 20V3020pF @ 1000V310W-55°C ~ 175°C (TJ)Chassis MountModule-
5,568
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MSCSM120TLM31C3AG
Microchip Technology
1
$273.8300
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1200V (1.2kV)89A (Tc)31mOhm @ 40A, 20V2.8V @ 1mA232nC @ 20V3020pF @ 1000V395W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
6,852
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MSCSM170AM23CT1AG
Microchip Technology
1
$277.0300
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1700V (1.7kV)124A (Tc)22.5mOhm @ 60A, 20V3.2V @ 5mA356nC @ 20V6600pF @ 1000V602W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
7,558
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MSCSM70VR1M10CT3AG
Microchip Technology
1
$278.4100
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)700V241A (Tc)9.5mOhm @ 80A, 20V2.4V @ 8mA430nC @ 20V9000pF @ 700V690W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
7,233
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MSCSM70TAM19T3AG
Microchip Technology
1
$295.3700
Datasheet
6 N-Channel (Phase Leg)Silicon Carbide (SiC)700V124A (Tc)19mOhm @ 40A, 20V2.4V @ 4mA215nC @ 20V4500pF @ 700V365W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
3,491
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MSCSM70DUM07T3AG
Microchip Technology
1
$299.7300
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)700V353A (Tc)6.4mOhm @ 120A, 20V2.4V @ 12mA645nC @ 20V13500pF @ 700V988W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
3,757
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