
Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 300
Product | Pricing | Datasheet | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() MSCSM120VR1M31C1AG Microchip Technology | 1 $170.9700 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 1,714 Cart + RFQ |
![]() MSCSM120DUM31CTBL1NG Microchip Technology | 1 $175.8400 | Datasheet | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 8,000 Cart + RFQ |
![]() MSCSM120AM31CTBL1NG Microchip Technology | 1 $175.8400 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 6,857 Cart + RFQ |
![]() MSCSM120TLM50C3AG Microchip Technology | 1 $180.1800 | Datasheet | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 6,857 Cart + RFQ |
![]() MSCSM120AM16T1AG Microchip Technology | 1 $191.7200 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 5,575 Cart + RFQ |
![]() MSCSM120DHM31CTBL2NG Microchip Technology | 1 $195.9300 | Datasheet | 2 N-Channel (Dual) Asymmetrical | Silicon Carbide (SiC) | 1200V | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 1,587 Cart + RFQ |
![]() MSCSM170DUM23T3AG Microchip Technology | 1 $200.6100 | Datasheet | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 8,298 Cart + RFQ |
![]() MSCSM70HM19T3AG Microchip Technology | 1 $215.3400 | Datasheet | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 6,857 Cart + RFQ |
![]() MSCSM70AM10T3AG Microchip Technology | 1 $218.2200 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 8,392 Cart + RFQ |
![]() MSCSM120HM31T3AG Microchip Technology | 1 $234.5900 | Datasheet | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 2,387 Cart + RFQ |
![]() MSCSM120DUM16T3AG Microchip Technology | 1 $237.4700 | Datasheet | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 3,760 Cart + RFQ |
![]() MSCSM70TLM19C3AG Microchip Technology | 1 $241.8000 | Datasheet | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 1,639 Cart + RFQ |
![]() MSCSM170TLM45C3AG Microchip Technology | 1 $244.7800 | Datasheet | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1700V (1.7kV) | 64A (Tc) | 45mOhm @ 30A, 20V | 3.2V @ 2.5mA | 178nC @ 20V | 3300pF @ 1000V | 319W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 4,916 Cart + RFQ |
![]() MSCSM120HM31TBL2NG Microchip Technology | 1 $260.8800 | Datasheet | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 9,663 Cart + RFQ |
![]() MSCSM120DDUM31TBL2NG Microchip Technology | 1 $260.8800 | Datasheet | 4 N-Channel, Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - | 5,568 Cart + RFQ |
![]() MSCSM120TLM31C3AG Microchip Technology | 1 $273.8300 | Datasheet | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 6,852 Cart + RFQ |
![]() MSCSM170AM23CT1AG Microchip Technology | 1 $277.0300 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 7,558 Cart + RFQ |
![]() MSCSM70VR1M10CT3AG Microchip Technology | 1 $278.4100 | Datasheet | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 7,233 Cart + RFQ |
![]() MSCSM70TAM19T3AG Microchip Technology | 1 $295.3700 | Datasheet | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 3,491 Cart + RFQ |
![]() MSCSM70DUM07T3AG Microchip Technology | 1 $299.7300 | Datasheet | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 700V | 353A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 988W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | 3,757 Cart + RFQ |