Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 300
ProductPricingDatasheetFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
MIC94051BM4TR
Microchip Technology
1
$0.2000
Datasheet
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4,629
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MIC5018BM4TR
Microchip Technology
1
$0.4700
Datasheet
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3,190
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RFQ
MIC5015BMTR
Microchip Technology
1
$0.6400
Datasheet
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1,319
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RFQ
MSCSM70DUM10T3AG
Microchip Technology
1
$218.2200
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)700V241A (Tc)9.5mOhm @ 80A, 20V2.4V @ 8mA430nC @ 20V9000pF @ 700V690W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
9,769
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MSCSM170DUM15T3AG
Microchip Technology
1
$273.3000
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)181A (Tc)15mOhm @ 90A, 20V3.2V @ 7.5mA534nC @ 20V9900pF @ 1000V862W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
6,726
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MSCSM120DUM11T3AG
Microchip Technology
1
$328.5800
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)254A (Tc)10.4mOhm @ 120A, 20V2.8V @ 3mA696nC @ 20V9060pF @ 1000V1067W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
3,326
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MSCSM170DUM11T3AG
Microchip Technology
1
$344.7700
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)240A (Tc)11.3mOhm @ 120A, 20V3.2V @ 10mA712nC @ 20V13200pF @ 1000V1140W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
4,450
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MSCSM170AM11CT3AG
Microchip Technology
1
$567.8400
Datasheet
2 N Channel (Phase Leg)Silicon Carbide (SiC)1700V (1.7kV)240A (Tc)11.3mOhm @ 120A, 20V3.2V @ 10mA712nC @ 20V13200pF @ 1000V1.14kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
2,274
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MSCSM170DUM058AG
Microchip Technology
1
$606.6100
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)353A (Tc)7.5mOhm @ 180A, 20V3.3V @ 15mA1068nC @ 20V19800pF @ 1000V1642W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6,021
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MSCSM170HM23CT3AG
Microchip Technology
1
$627.6500
Datasheet
4 N-Channel (Full Bridge)Silicon Carbide (SiC)1700V (1.7kV)124A (Tc)22.5mOhm @ 60A, 20V3.2V @ 5mA356nC @ 20V6600pF @ 1000V602W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
4,283
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MSCSM70DUM025AG
Microchip Technology
1
$659.4300
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)700V689A (Tc)3.2mOhm @ 240A, 20V2.4V @ 24mA1290nC @ 20V27000pF @ 700V1882W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
2,354
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MSCSM120DUM042AG
Microchip Technology
1
$717.1800
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)495A (Tc)5.2mOhm @ 240A, 20V2.8V @ 6mA1392nC @ 20V18100pF @ 1000V2031W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6,920
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RFQ
MSCSM170TLM15CAG
Microchip Technology
1
$767.0200
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1700V (1.7kV)179A (Tc)15mOhm @ 90A, 20V3.2V @ 7.5mA534nC @ 20V9900pF @ 1000V843W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C
8,539
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MSCSM70TLM07CAG
Microchip Technology
1
$784.7300
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)700V349A (Tc)6.4mOhm @ 120A, 20V2.4V @ 12mA645nC @ 20V13500pF @ 700V966W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C
2,934
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MSCSM170DUM039AG
Microchip Technology
1
$820.3800
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)523A (Tc)5mOhm @ 270A, 20V3.3V @ 22.5mA1602nC @ 20V29700pF @ 1000V2400W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6,053
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MSCSM120TLM11CAG
Microchip Technology
1
$854.1800
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1200V (1.2kV)251A (Tc)10.4mOhm @ 120A, 20V2.8V @ 3mA696nC @ 20V9000pF @ 1000V1042W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C
2,464
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MSCSM70DUM017AG
Microchip Technology
1
$899.6100
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)700V1021A (Tc)2.1mOhm @ 360A, 20V2.4V @ 36mA1935nC @ 20V40500pF @ 700V2750W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
2,162
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MSCSM170TLM11CAG
Microchip Technology
1
$955.9300
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)1700V (1.7kV)238A (Tc)11.3mOhm @ 120A, 20V3.2V @ 10mA712nC @ 20V13200pF @ 1000V1114W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C
2,418
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MSCSM120DUM027AG
Microchip Technology
1
$986.2200
Datasheet
2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)733A (Tc)3.5mOhm @ 360A, 20V2.8V @ 9mA2088nC @ 20V27000pF @ 1000V2968W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
4,606
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MSCSM70TLM05CAG
Microchip Technology
1
$996.3500
Datasheet
4 N-Channel (Three Level Inverter)Silicon Carbide (SiC)700V464A (Tc)4.8mOhm @ 160A, 20V2.4V @ 16mA860nC @ 20V18000pF @ 700V1277W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C
5,774
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