
Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 486
Product | Pricing | Datasheet | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() IPG20N04S409ATMA1 Infineon Technologies | 1 $1.5100 | Datasheet | 2 N-Channel (Dual) | Standard | 40V | 20A (Tc) | 8.6mOhm @ 17A, 10V | 4V @ 22µA | 28nC @ 10V | 2250pF @ 25V | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 3,486 Cart + RFQ |
![]() IPG20N04S409AATMA1 Infineon Technologies | 1 $0.6934 | Datasheet | 2 N-Channel (Dual) | Standard | 40V | 20A (Tc) | 8.6mOhm @ 17A, 10V | 4V @ 22µA | 28nC @ 10V | 2250pF @ 25V | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | 6,411 Cart + RFQ |
![]() IPG20N06S415ATMA2 Infineon Technologies | 1 $0.6972 | Datasheet | 2 N-Channel (Dual) | Standard | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | 6,818 Cart + RFQ |
![]() IRL6297SDTRPBF Infineon Technologies | 1 $0.7306 | Datasheet | 2 N-Channel (Dual) | Logic Level Gate | 20V | 15A | 4.9mOhm @ 15A, 4.5V | 1.1V @ 35µA | 54nC @ 10V | 2245pF @ 10V | 1.7W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SA | DIRECTFET™ SA | 7,523 Cart + RFQ |
![]() IPG20N06S4L14ATMA2 Infineon Technologies | 1 $0.7359 | Datasheet | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | 2890pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 | 6,204 Cart + RFQ |
![]() IPG20N04S4L08AATMA1 Infineon Technologies | 1 $0.8801 | Datasheet | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 | 1,024 Cart + RFQ |
![]() IPG20N06S4L11AATMA1 Infineon Technologies | 1 $0.9798 | Datasheet | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 | 2,262 Cart + RFQ |
![]() BSO604NS2XUMA1 Infineon Technologies | 1 $1.0260 | Datasheet | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5A | 35mOhm @ 2.5A, 10V | 2V @ 30µA | 26nC @ 10V | 870pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 | 2,390 Cart + RFQ |
![]() IPG20N04S408AATMA1 Infineon Technologies | 1 $2.1300 | Datasheet | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 | 1,963 Cart + RFQ |
![]() AUIRF7379QTR Infineon Technologies | 1 $1.1433 | Datasheet | N and P-Channel | Logic Level Gate | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 9,902 Cart + RFQ |
![]() AUIRF7343QTR Infineon Technologies | 1 $2.8800 | Datasheet | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 8,637 Cart + RFQ |
![]() AUIRFN8458TR Infineon Technologies | 1 $1.4282 | Datasheet | 2 N-Channel (Dual) | Standard | 40V | 43A (Tc) | 10mOhm @ 26A, 10V | 3.9V @ 25µA | 33nC @ 10V | 1060pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 8,087 Cart + RFQ |
![]() AUIRFN8458TRXTMA1 Infineon Technologies | 1 $1.4282 | Datasheet | 2 N-Channel (Dual) | Standard | 40V | 43A (Tc) | 10mOhm @ 26A, 10V | 3.9V @ 25µA | 33nC @ 10V | 2250pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 5,836 Cart + RFQ |
![]() BSG0813NDIATMA1 Infineon Technologies | 1 $1.5778 | Datasheet | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 33A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | 2.5W | -55°C ~ 155°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 | 5,666 Cart + RFQ |
![]() IRFH4251DTRPBF Infineon Technologies | 1 $2.0697 | Datasheet | 2 N-Channel (Dual), Schottky | Logic Level Gate | 25V | 64A, 188A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | 31W, 63W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TISON-8 | 7,897 Cart + RFQ |
![]() FS45MR12W1M1B11BOMA1 Infineon Technologies | 1 $124.5600 | Datasheet | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 | 6,489 Cart + RFQ |
![]() FF11MR12W2M1HPB11BPSA1 Infineon Technologies | 1 $147.3150 | Datasheet | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | - | 5,707 Cart + RFQ |
![]() FF11MR12W1M1PB11BPSA1 Infineon Technologies | 1 $206.4500 | Datasheet | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1B-2 | 5,621 Cart + RFQ |
![]() FF11MR12W1M1B70BPSA1 Infineon Technologies | 1 $228.1000 | Datasheet | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1B | 2,562 Cart + RFQ |
![]() FF8MR12W2M1B11BOMA1 Infineon Technologies | 1 $1.0000 | Datasheet | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A (Tj) | 7.5mOhm @ 150A, 15V (Typ) | 5.55V @ 60mA | 372nC @ 15V | 11000pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY2BM-2 | 1,467 Cart + RFQ |