Transistors - Bipolar (BJT) - Single
Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
Product List
Total Components: 664
| Product | Pricing | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PBSS4350S,126 Freescale / NXP Semiconductors | Datasheet | NPN | 3 A | 50 V | 290mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 2A, 2V | 830 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 7,755 Cart + RFQ | |
PBSS5160K,115 Freescale / NXP Semiconductors | Datasheet | PNP | 700 mA | 60 V | 340mV @ 100mA, 1A | 100nA | 150 @ 500mA, 5V | 425 mW | 185MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 6,017 Cart + RFQ | |
PBSS5350S,126 Freescale / NXP Semiconductors | Datasheet | PNP | 3 A | 50 V | 300mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 2A, 2V | 830 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 5,819 Cart + RFQ | |
PBSS8110AS,126 Freescale / NXP Semiconductors | Datasheet | NPN | 1 A | 100 V | 200mV @ 100mA, 1A | 100nA | 150 @ 250mA, 10V | 830 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 1,044 Cart + RFQ | |
PBSS8110S,126 Freescale / NXP Semiconductors | Datasheet | NPN | 1 A | 100 V | 200mV @ 100mA, 1A | 100nA | 150 @ 250mA, 10V | 830 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 4,766 Cart + RFQ | |
PBSS9110AS,126 Freescale / NXP Semiconductors | Datasheet | PNP | 1 A | 100 V | 320mV @ 100mA, 1A | 100nA | 150 @ 500mA, 5V | 830 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 1,699 Cart + RFQ | |
PBSS9110S,126 Freescale / NXP Semiconductors | Datasheet | PNP | 1 A | 100 V | 320mV @ 100mA, 1A | 100nA | 150 @ 500mA, 5V | 830 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 2,198 Cart + RFQ | |
BC879,112 Freescale / NXP Semiconductors | Datasheet | NPN - Darlington | 1 A | 80 V | 1.8V @ 1mA, 1A | 50nA | 2000 @ 500mA, 10V | 830 mW | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 4,894 Cart + RFQ | |
BC327-25,112 Freescale / NXP Semiconductors | Datasheet | PNP | 500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 625 mW | 80MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 7,874 Cart + RFQ | |
BC327-40,112 Freescale / NXP Semiconductors | Datasheet | PNP | 500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 250 @ 100mA, 1V | 625 mW | 80MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 5,690 Cart + RFQ | |
BC546B,126 Freescale / NXP Semiconductors | 1 $0.2252 | Datasheet | NPN | 100 mA | 65 V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 100,000 Cart + RFQ |
BC557C,112 Freescale / NXP Semiconductors | Datasheet | PNP | 100 mA | 45 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 500 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 1,063 Cart + RFQ | |
PN2369A,126 Freescale / NXP Semiconductors | Datasheet | NPN | 200 mA | 15 V | 500mV @ 10mA, 100mA | 400nA (ICBO) | 40 @ 10mA, 350mV | 500 mW | 500MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 1,837 Cart + RFQ | |
BC547B,112 Freescale / NXP Semiconductors | 1 $0.4616 | Datasheet | NPN | 100 mA | 45 V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 100,000 Cart + RFQ |
BC547C,112 Freescale / NXP Semiconductors | 1 $0.4616 | Datasheet | NPN | 100 mA | 45 V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 500 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 100,000 Cart + RFQ |
BC556B,112 Freescale / NXP Semiconductors | Datasheet | PNP | 100 mA | 65 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 500 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 4,380 Cart + RFQ | |
BC557B,112 Freescale / NXP Semiconductors | Datasheet | PNP | 100 mA | 45 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 500 mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 1,476 Cart + RFQ | |
2N5401,116 Freescale / NXP Semiconductors | 1 $0.0800 | Datasheet | PNP | 300 mA | 150 V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 60 @ 10mA, 5V | 630 mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 100,000 Cart + RFQ |
2N5551,116 Freescale / NXP Semiconductors | 1 $0.0800 | Datasheet | NPN | 300 mA | 160 V | 200mV @ 5mA, 50mA | 50nA (ICBO) | 80 @ 10mA, 5V | 630 mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 100,000 Cart + RFQ |
2PA1015GR,126 Freescale / NXP Semiconductors | Datasheet | PNP | 150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 500 mW | 80MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 | 3,197 Cart + RFQ |