Transistors - Bipolar (BJT) - Single
Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
Product List
Total Components: 593
ProductPricingDatasheetTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
BC141-16
STMicroelectronics
Datasheet
NPN1 A60 V1V @ 100mA, 1A100nA100 @ 100mA, 1V650 mW50MHz175°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
1,704
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RFQ
BC394
STMicroelectronics
Datasheet
NPN100 mA180 V400mV @ 5mA, 50mA50nA (ICBO)30 @ 10mA, 10V400 mW-175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
1,189
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RFQ
BCY59IX
STMicroelectronics
Datasheet
NPN200 mA45 V700mV @ 2.5mA, 100mA10nA180 @ 2mA, 5V390 mW200MHz175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
8,833
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BCY59VIII
STMicroelectronics
Datasheet
NPN200 mA45 V700mV @ 2.5mA, 100mA10nA180 @ 2mA, 5V390 mW200MHz175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
3,600
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RFQ
BCY59X
STMicroelectronics
Datasheet
NPN200 mA45 V700mV @ 2.5mA, 100mA10nA180 @ 2mA, 5V390 mW200MHz175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
8,501
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RFQ
BD235
STMicroelectronics
Datasheet
NPN2 A60 V600mV @ 100mA, 1A100µA (ICBO)25 @ 1A, 2V25 W-150°C (TJ)Through HoleTO-225AA, TO-126-3SOT-32-3
3,706
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RFQ
BD238
STMicroelectronics
Datasheet
PNP2 A80 V600mV @ 100mA, 1A100µA (ICBO)25 @ 1A, 2V25 W-150°C (TJ)Through HoleTO-225AA, TO-126-3SOT-32-3
1,027
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RFQ
BD241A
STMicroelectronics
Datasheet
NPN3 A60 V1.2V @ 600mA, 3A300µA25 @ 1A, 4V40 W-150°C (TJ)Through HoleTO-220-3TO-220
2,016
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RFQ
BD244C
STMicroelectronics
Datasheet
PNP6 A100 V1.5V @ 1A, 6A700µA15 @ 3A, 4V65 W-150°C (TJ)Through HoleTO-220-3TO-220
5,999
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RFQ
BD534
STMicroelectronics
Datasheet
PNP8 A45 V800mV @ 600mA, 6A100µA25 @ 2A, 2V50 W-150°C (TJ)Through HoleTO-220-3TO-220
4,949
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RFQ
BD535
STMicroelectronics
Datasheet
NPN8 A60 V800mV @ 600mA, 6A100µA25 @ 2A, 2V50 W-150°C (TJ)Through HoleTO-220-3TO-220
5,747
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RFQ
BD536
STMicroelectronics
Datasheet
PNP8 A60 V800mV @ 600mA, 6A100µA25 @ 2A, 2V50 W-150°C (TJ)Through HoleTO-220-3TO-220
3,888
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RFQ
BD537
STMicroelectronics
Datasheet
NPN8 A80 V800mV @ 600mA, 6A100µA15 @ 2A, 2V50 W-150°C (TJ)Through HoleTO-220-3TO-220
1,200
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RFQ
BF420-AP
STMicroelectronics
Datasheet
NPN500 mA300 V600mV @ 5mA, 30mA10nA (ICBO)50 @ 25mA, 20V830 mW60MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
2,338
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RFQ
BSS44
STMicroelectronics
Datasheet
PNP5 A60 V1V @ 500mA, 5A500nA40 @ 2A, 2V870 mW80MHz200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
7,088
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RFQ
BU406
STMicroelectronics
Datasheet
NPN7 A200 V1V @ 500mA, 5A5mA-60 W10MHz150°C (TJ)Through HoleTO-220-3TO-220
9,428
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RFQ
BU508AFI
STMicroelectronics
Datasheet
NPN8 A700 V1V @ 2A, 4.5A1mA-50 W7MHz150°C (TJ)Through HoleISOWATT-218-3ISOWATT-218FX
6,877
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RFQ
BU806
STMicroelectronics
Datasheet
NPN - Darlington8 A200 V1.5V @ 50mA, 5A100µA-60 W-150°C (TJ)Through HoleTO-220-3TO-220
5,100
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RFQ
BU807
STMicroelectronics
Datasheet
NPN - Darlington8 A150 V1.5V @ 50mA, 5A100µA-60 W-150°C (TJ)Through HoleTO-220-3TO-220
3,871
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RFQ
BU808DFI
STMicroelectronics
Datasheet
NPN - Darlington8 A700 V1.6V @ 500mA, 5A400µA60 @ 5A, 5V52 W-150°C (TJ)Through HoleISOWATT-218-3ISOWATT-218
3,055
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RFQ