Transistors - Bipolar (BJT) - Single
Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
Product List
Total Components: 593
ProductPricingDatasheetTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
2N5415
STMicroelectronics
Datasheet
PNP1 A200 V2.5V @ 5mA, 50mA50µA30 @ 50mA, 10V1 W15MHz-Through HoleTO-205AD, TO-39-3 Metal CanTO-39
2,585
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RFQ
2N1711
STMicroelectronics
Datasheet
NPN500 mA50 V1.5V @ 15mA, 150mA10nA (ICBO)35 @ 100mA, 10V800 mW100MHz175°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
1,531
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RFQ
2N2219A
STMicroelectronics
Datasheet
NPN800 mA30 V1.6V @ 50mA, 500mA100nA (ICBO)100 @ 150mA, 10V800 mW250MHz175°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
7,900
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RFQ
2N5416
STMicroelectronics
Datasheet
PNP1 A300 V2.5V @ 5mA, 50mA50µA30 @ 50mA, 10V1 W15MHz-Through HoleTO-205AD, TO-39-3 Metal CanTO-39
6,906
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RFQ
2N3772
STMicroelectronics
Datasheet
NPN20 A60 V4V @ 4A, 20A10mA15 @ 10A, 4V150 W200kHz-Chassis MountTO-204AA, TO-3TO-3
9,831
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RFQ
2N2222A
STMicroelectronics
1
$79.2616
Datasheet
NPN600 mA40 V1V @ 50mA, 150mA10nA (ICBO)100 @ 150mA, 10V500 mW300MHz175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
100,000
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RFQ
BU508A
STMicroelectronics
Datasheet
NPN8 A700 V1V @ 2A, 4.5A1mA-125 W7MHz150°C (TJ)Through HoleTO-247-3TO-247-3
7,690
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RFQ
TIP34C
STMicroelectronics
Datasheet
PNP10 A100 V4V @ 2.5A, 10A700µA20 @ 3A, 4V80 W3MHz150°C (TJ)Through HoleTO-247-3TO-247-3
9,141
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RFQ
BDW83C
STMicroelectronics
Datasheet
NPN - Darlington15 A100 V4V @ 150mA, 15A1mA750 @ 6A, 3V130 W-150°C (TJ)Through HoleTO-247-3TO-247-3
3,635
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RFQ
TIP30A
STMicroelectronics
Datasheet
PNP1 A60 V700mV @ 125mA, 1A300µA15 @ 1A, 4V2 W-150°C (TJ)Through HoleTO-220-3TO-220
7,755
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RFQ
2N3055
STMicroelectronics
Datasheet
NPN15 A60 V3V @ 3.3A, 10A700µA20 @ 4A, 4V115 W-200°C (TJ)Chassis MountTO-204AA, TO-3TO-3
8,868
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RFQ
2N6111
STMicroelectronics
Datasheet
PNP7 A30 V3.5V @ 3A, 7A1mA30 @ 3A, 4V40 W4MHz150°C (TJ)Through HoleTO-220-3TO-220
2,075
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RFQ
TIP33C
STMicroelectronics
Datasheet
NPN10 A100 V4V @ 2.5A, 10A700µA20 @ 3A, 4V80 W3MHz150°C (TJ)Through HoleTO-247-3TO-247-3
9,773
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RFQ
TIP146
STMicroelectronics
Datasheet
PNP - Darlington10 A80 V3V @ 40mA, 10A2mA1000 @ 5A, 4V125 W-150°C (TJ)Through HoleTO-218-3TO-218
5,639
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RFQ
TIP145
STMicroelectronics
Datasheet
PNP - Darlington10 A60 V3V @ 40mA, 10A2mA1000 @ 5A, 4V125 W-150°C (TJ)Through HoleTO-218-3TO-218
6,875
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RFQ
2N5657
STMicroelectronics
Datasheet
NPN500 mA350 V10V @ 100mA, 500mA100µA30 @ 100mA, 10V20 W10MHz150°C (TJ)Through HoleTO-225AA, TO-126-3SOT-32-3
7,462
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RFQ
TIP49
STMicroelectronics
Datasheet
NPN1 A350 V1V @ 200mA, 1A1mA30 @ 300mA, 10V2 W10MHz150°C (TJ)Through HoleTO-220-3TO-220
6,684
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RFQ
2N3440
STMicroelectronics
Datasheet
NPN1 A250 V500mV @ 4mA, 50mA50µA40 @ 20mA, 10V1 W15MHz200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
1,035
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RFQ
TIP48
STMicroelectronics
Datasheet
NPN1 A300 V1V @ 200mA, 1A1mA30 @ 300mA, 10V2 W10MHz150°C (TJ)Through HoleTO-220-3TO-220
2,125
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RFQ
BD243C
STMicroelectronics
Datasheet
NPN6 A100 V1.5V @ 1A, 6A700µA15 @ 3A, 4V65 W-150°C (TJ)Through HoleTO-220-3TO-220
6,519
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RFQ