Transistors - Bipolar (BJT) - Single
Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
Product List
Total Components: 593
ProductPricingDatasheetTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
MJ4035
STMicroelectronics
Datasheet
NPN - Darlington16 A100 V4V @ 80mA, 16A3mA1000 @ 10A, 3V150 W-200°C (TJ)Chassis MountTO-204AA, TO-3TO-3
2,558
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MJ802
STMicroelectronics
Datasheet
NPN30 A90 V800mV @ 750mA, 7.5A1mA (ICBO)25 @ 7.5A, 2V200 W2MHz200°C (TJ)Chassis MountTO-204AA, TO-3TO-3
7,657
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MJD31C
STMicroelectronics
Datasheet
NPN3 A100 V1.2V @ 375mA, 3A50µA10 @ 3A, 4V15 W-150°C (TJ)Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK
2,609
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MJD32C
STMicroelectronics
Datasheet
PNP3 A100 V1.2V @ 375mA, 3A50µA10 @ 3A, 4V15 W-150°C (TJ)Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK
7,076
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MJE5852
STMicroelectronics
Datasheet
PNP8 A400 V5V @ 3A, 8A500µA5 @ 5A, 5V80 W-150°C (TJ)Through HoleTO-220-3TO-220
8,553
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RFQ
SGSD100
STMicroelectronics
Datasheet
NPN - Darlington25 A80 V3.5V @ 80mA, 20A500µA500 @ 10A, 3V130 W--Through HoleTO-247-3TO-247-3
2,536
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SGSD200
STMicroelectronics
Datasheet
PNP - Darlington25 A80 V3.5V @ 80mA, 20A500µA500 @ 10A, 3V130 W--Through HoleTO-247-3TO-247-3
4,023
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RFQ
ST13003
STMicroelectronics
Datasheet
NPN1.5 A400 V1.5V @ 500mA, 1.5A1mA5 @ 1A, 2V40 W--40°C ~ 150°C (TJ)Through HoleTO-225AA, TO-126-3SOT-32-3
2,506
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RFQ
ST1802FH
STMicroelectronics
Datasheet
NPN10 A600 V5V @ 800mA, 4A1mA4 @ 5A, 5V40 W-150°C (TJ)Through HoleTO-220-3 Full Pack, Isolated TabTO-220FH
8,463
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ST1802FX
STMicroelectronics
Datasheet
NPN10 A600 V5V @ 800mA, 4A1mA4 @ 5A, 5V60 W-150°C (TJ)Through HoleISOWATT218FXISOWATT-218FX
6,799
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ST2001FX
STMicroelectronics
Datasheet
NPN10 A600 V1.5V @ 1.25A, 5A1mA5 @ 6A, 5V63 W-150°C (TJ)Through HoleISOWATT218FXISOWATT-218FX
7,604
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RFQ
ST2310DHI
STMicroelectronics
Datasheet
NPN12 A600 V3V @ 1.75A, 7A1mA5.5 @ 7A, 5V55 W-150°C (TJ)Through HoleISOWATT-218-3ISOWATT-218
7,625
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ST2408HI
STMicroelectronics
Datasheet
NPN12 A600 V3V @ 2A, 8A1mA6 @ 8A, 5V55 W-150°C (TJ)Through HoleISOWATT-218-3ISOWATT-218
5,311
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ST8812FP
STMicroelectronics
Datasheet
NPN7 A600 V3V @ 800mA, 4A1mA4.5 @ 5A, 5V36 W-150°C (TJ)Through HoleTO-220-3 Full PackTO-220FP
2,682
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RFQ
STBV42
STMicroelectronics
Datasheet
NPN1 A400 V1.5V @ 250mA, 750mA1mA10 @ 400mA, 5V1 W-150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
5,476
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RFQ
STBV45
STMicroelectronics
Datasheet
NPN750 mA400 V1.5V @ 135mA, 400mA250µA5 @ 400mA, 5V950 mW-150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
9,334
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RFQ
STBV68
STMicroelectronics
Datasheet
NPN600 mA400 V5V @ 100mA, 250mA-3 @ 250mA, 10V900 mW-150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
2,245
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RFQ
STF724
STMicroelectronics
Datasheet
NPN3 A30 V1.1V @ 150mA, 3A100µA100 @ 100mA, 2V1.4 W100MHz-Surface MountTO-243AASOT-89-3
9,221
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RFQ
STPSA42-AP
STMicroelectronics
Datasheet
NPN500 mA300 V500mV @ 2mA, 20mA100nA (ICBO)40 @ 30mA, 10V625 mW50MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92AP
2,372
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RFQ
STX112
STMicroelectronics
Datasheet
NPN - Darlington2 A100 V2.5V @ 8mA, 2A2mA1000 @ 1A, 4V1.2 W-150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
1,196
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RFQ