Transistors - Bipolar (BJT) - RF
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Product List
Total Components: 4
ProductPricingDatasheetTransistor TypeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionNoise Figure (dB Typ @ f)GainPower - MaxDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector (Ic) (Max)Operating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
RZ1214B35YI
Rochester Electronics
1
$270.4000
Datasheet
NPN60V--7dB125W-3A-Chassis MountSOT-443ASOT443A
7,291
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RFQ
RX1214B300YI
Rochester Electronics
1
$1.0000
Datasheet
NPN60V--8dB570W-21A-Chassis MountSOT-439ACDFM2
7,884
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RFQ
ON5040
Rochester Electronics
1
$1.0000
Datasheet
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2,965
Cart +
RFQ
MX0912B251Y
Rochester Electronics
1
$1.0000
Datasheet
NPN60V1.215GHz-8dB690W-15A-Chassis MountSOT-439ACDFM2
8,170
Cart +
RFQ