Transistors - Bipolar (BJT) - RF
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Product List
Total Components: 1
| Product | Pricing | Datasheet | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MMBT918_R1_00001 PANJIT | 1 $0.2300 | Datasheet | NPN | 15V | 600MHz | - | - | 225mW | 20 @ 3mA, 1V | 50mA | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 5,514 Cart + RFQ |