Transistors - Bipolar (BJT) - RF
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Product List
Total Components: 6
ProductPricingDatasheetTransistor TypeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionNoise Figure (dB Typ @ f)GainPower - MaxDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector (Ic) (Max)Operating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
2N2369
Microchip Technology
1
$4.0500
Datasheet
NPN15V---680mW40 @ 10mA, 1V200mA-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
6,748
Cart +
RFQ
2N3799
Microchip Technology
1
$11.4300
Datasheet
NPN60V---1.2W300 @ 500µA, 5V50mA-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
8,899
Cart +
RFQ
2N3497
Microchip Technology
1
$32.4000
Datasheet
PNP120V150MHz--400mW40 @ 50mA, 10V100mA-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
1,401
Cart +
RFQ
2N3496
Microchip Technology
1
$32.4000
Datasheet
PNP80V250MHz--600mW35 @ 100mA, 10V100mA-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
6,310
Cart +
RFQ
2N3495
Microchip Technology
1
$32.4000
Datasheet
PNP120V150MHz--400mW40 @ 50mA, 10V100mA-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5AA
8,348
Cart +
RFQ
2N1725
Microchip Technology
1
$435.6000
Datasheet
3 NPN80V---3W50 @ 2A, 15V5A175°C (TJ)Stud MountTO-211MA, TO-210AC, TO-61-4, StudTO-61
3,785
Cart +
RFQ