Transistors - Bipolar (BJT) - RF
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Product List
Total Components: 3
ProductPricingDatasheetTransistor TypeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionNoise Figure (dB Typ @ f)GainPower - MaxDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector (Ic) (Max)Operating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
MPSH10-AP
Micro Commercial Components (MCC)
Datasheet
NPN25V650MHz--350mW60 @ 4mA, 10V50mA-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92
1,516
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RFQ
MPSH10-BP
Micro Commercial Components (MCC)
Datasheet
NPN25V650MHz--350mW60 @ 4mA, 10V50mA-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
4,365
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RFQ
MMBTH10-TP
Micro Commercial Components (MCC)
1
$0.3300
Datasheet
NPN25V650MHz--225mW60 @ 4mA, 10V50mA-55°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23
6,105
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RFQ