Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 55
Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GP3D008A065A SemiQ | 1 $2.6000 | Datasheet | Silicon Carbide Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 336pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 8,967 Cart + RFQ |
GP3D030A120B SemiQ | 1 $15.7300 | Datasheet | Silicon Carbide Schottky | 1200 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1762pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 2,153 Cart + RFQ |
GP3D010A065C SemiQ | 1 $3.0600 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 2,330 Cart + RFQ |
GP3D015A120B SemiQ | 1 $8.9100 | Datasheet | Silicon Carbide Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 962pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 4,791 Cart + RFQ |
GP3D008A065D SemiQ | 1 $1.9173 | Datasheet | - | 650 V | 8A | - | - | - | - | - | - | - | - | - | 6,647 Cart + RFQ |
GP3D010A065B SemiQ | 1 $3.5000 | Datasheet | Silicon Carbide Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 9,841 Cart + RFQ |
GP3D020A065A SemiQ | 1 $5.6924 | Datasheet | Silicon Carbide Schottky | 650 V | 20A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 650 V | 1247pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 8,421 Cart + RFQ |
GP3D040A065U SemiQ | 1 $7.5767 | Datasheet | Silicon Carbide Schottky | 650 V | 40A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 835pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C | 6,985 Cart + RFQ |
GP3D050A065B SemiQ | 1 $11.8030 | Datasheet | Silicon Carbide Schottky | 650 V | 135A | 1.6 V @ 50 A | No Recovery Time > 500mA (Io) | - | 125 µA @ 650 V | 1946pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 9,605 Cart + RFQ |
GP3D050A120B SemiQ | 1 $24.1600 | Datasheet | Silicon Carbide Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 3040pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 3,887 Cart + RFQ |
GP3D010A120A SemiQ | 1 $6.2400 | Datasheet | Silicon Carbide Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 608pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 4,666 Cart + RFQ |
GP3D030A065B SemiQ | 1 $8.7900 | Datasheet | Silicon Carbide Schottky | 650 V | 30A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1247pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 8,774 Cart + RFQ |
GP2D050A120B SemiQ | Datasheet | Silicon Carbide Schottky | 1200 V | 50A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 3174pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 6,600 Cart + RFQ | |
GP2D003A060C SemiQ | Datasheet | Silicon Carbide Schottky | 600 V | 3A | 1.65 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 600 V | 158pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C | 1,623 Cart + RFQ | |
GP2D003A065A SemiQ | Datasheet | Silicon Carbide Schottky | 650 V | 3A | 1.65 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 158pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 5,319 Cart + RFQ | |
GP2D005A120A SemiQ | Datasheet | Silicon Carbide Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 2,724 Cart + RFQ | |
GP2D005A120C SemiQ | Datasheet | Silicon Carbide Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C | 5,664 Cart + RFQ | |
GP2D005A170B SemiQ | Datasheet | Silicon Carbide Schottky | 1700 V | 5A | 1.75 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 406pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 1,147 Cart + RFQ | |
GP2D006A065A SemiQ | Datasheet | Silicon Carbide Schottky | 650 V | 6A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 5,743 Cart + RFQ | |
GP2D006A065C SemiQ | Datasheet | Silicon Carbide Schottky | 650 V | 6A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C | 6,276 Cart + RFQ |