Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 931
| Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDW15E65D2FKSA1 Infineon Technologies | 1 $1.2000 | Datasheet | Standard | 650 V | 30A | 2.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 47 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3-1 | -40°C ~ 175°C | 3,989 Cart + RFQ |
IDP2308T1XUMA1 Infineon Technologies | 1 $2.1730 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 2,968 Cart + RFQ |
IDH05SG60CXKSA2 Infineon Technologies | 1 $2.2767 | Datasheet | Silicon Carbide Schottky | 600 V | 5A | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 9,730 Cart + RFQ |
IDP23013XUMA1 Infineon Technologies | 1 $2.2834 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 7,218 Cart + RFQ |
IDW50E60FKSA1 Infineon Technologies | 1 $2.4011 | Datasheet | Standard | 600 V | 80A | 2 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 40 µA @ 600 V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C | 8,814 Cart + RFQ |
IDK08G65C5XTMA2 Infineon Technologies | 1 $2.5008 | Datasheet | Silicon Carbide Schottky | 650 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | - | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C | 1,448 Cart + RFQ |
IDK09G65C5XTMA2 Infineon Technologies | 1 $2.7991 | Datasheet | Silicon Carbide Schottky | 650 V | 9A | 1.8 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 1.6 mA @ 650 V | 270pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C | 2,693 Cart + RFQ |
IDP2321XUMA1 Infineon Technologies | 1 $2.9096 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 1,039 Cart + RFQ |
AIDW10S65C5XKSA1 Infineon Technologies | 1 $3.0995 | Datasheet | Silicon Carbide Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 303pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C | 4,670 Cart + RFQ |
IDK12G65C5XTMA2 Infineon Technologies | 1 $3.6572 | Datasheet | Silicon Carbide Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | - | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C | 6,536 Cart + RFQ |
IDD09SG60CXTMA2 Infineon Technologies | 1 $3.8742 | Datasheet | Silicon Carbide Schottky | 600 V | 9A | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C | 1,093 Cart + RFQ |
IDH09SG60CXKSA2 Infineon Technologies | 1 $4.0156 | Datasheet | Silicon Carbide Schottky | 600 V | 9A | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 7,475 Cart + RFQ |
IDFW40E65D1EXKSA1 Infineon Technologies | 1 $2.6500 | Datasheet | Standard | 650 V | 42A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 76 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3-AI | -40°C ~ 175°C | 6,540 Cart + RFQ |
AIDK16S65C5ATMA1 Infineon Technologies | 1 $4.2744 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 3,198 Cart + RFQ |
AIDW16S65C5XKSA1 Infineon Technologies | 1 $1.0000 | Datasheet | Silicon Carbide Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 471pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C | 3,404 Cart + RFQ |
IDL04G65C5XUMA2 Infineon Technologies | 1 $2.8000 | Datasheet | Silicon Carbide Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C | 6,091 Cart + RFQ |
IDH04G65C6XKSA1 Infineon Technologies | 1 $2.5500 | Datasheet | Silicon Carbide Schottky | 650 V | 12A | 1.35 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 420 V | 205pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C | 9,173 Cart + RFQ |
IDH04G65C5XKSA2 Infineon Technologies | 1 $2.5600 | Datasheet | Silicon Carbide Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 2,482 Cart + RFQ |
IDH06G65C5XKSA2 Infineon Technologies | 1 $3.3200 | Datasheet | Silicon Carbide Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 2,928 Cart + RFQ |
IDW20G65C5BXKSA2 Infineon Technologies | 1 $8.0661 | Datasheet | Silicon Carbide Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C | 5,996 Cart + RFQ |