Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 931
| Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH10SG60CXKSA2 Infineon Technologies | 1 $7.1200 | Datasheet | Silicon Carbide Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 7,643 Cart + RFQ |
AIDW20S65C5XKSA1 Infineon Technologies | 1 $8.6500 | Datasheet | Silicon Carbide Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 584pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C | 6,790 Cart + RFQ |
AIDW40S65C5XKSA1 Infineon Technologies | 1 $12.4900 | Datasheet | Silicon Carbide Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 1138pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C | 9,962 Cart + RFQ |
IDWD40G120C5XKSA1 Infineon Technologies | 1 $20.7100 | Datasheet | Silicon Carbide Schottky | 1200 V | 110A | 1.65 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 332 µA @ 1200 V | 2592pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C | 9,610 Cart + RFQ |
DZ600N16KHPSA1 Infineon Technologies | 1 $232.5800 | Datasheet | Standard | 1600 V | 735A | 1.4 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1600 V | - | Chassis Mount | Module | Module | -40°C ~ 150°C | 2,332 Cart + RFQ |
DZ435N40KHPSA1 Infineon Technologies | 1 $337.9200 | Datasheet | Standard | 4000 V | 700A | 1.71 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 4000 V | - | Chassis Mount | Module | Module | -40°C ~ 150°C | 1,248 Cart + RFQ |
D4600U45X172XPSA1 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 4500 V | 4450A | 2 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 mA @ 4500 V | - | Chassis Mount | DO-200AE | BG-D17226K-1 | 140°C (Max) | 7,243 Cart + RFQ |
BAS3005A02VH6327XTSA1 Infineon Technologies | 1 $0.4500 | Datasheet | Schottky | 30 V | 500mA | 500 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 30 V | 15pF @ 5V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C | 5,349 Cart + RFQ |
IDV08E65D2XKSA1 Infineon Technologies | 1 $1.2600 | Datasheet | Standard | 650 V | 8A | 2.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C | 8,661 Cart + RFQ |
IDP08E65D2XKSA1 Infineon Technologies | 1 $1.4500 | Datasheet | Standard | 650 V | 8A | 2.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C | 2,581 Cart + RFQ |
IDDD06G65C6XTMA1 Infineon Technologies | 1 $1.7992 | Datasheet | Silicon Carbide Schottky | 650 V | 18A | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 420 V | 302pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C | 3,098 Cart + RFQ |
IDP08E65D1XKSA1 Infineon Technologies | 1 $0.7600 | Datasheet | Standard | 650 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C | 3,738 Cart + RFQ |
IDP30E65D2XKSA1 Infineon Technologies | 1 $2.1100 | Datasheet | Standard | 650 V | 60A | 2.2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C | 7,995 Cart + RFQ |
AIDK10S65C5ATMA1 Infineon Technologies | 1 $5.4200 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 3,705 Cart + RFQ |
IDW75E60FKSA1 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 600 V | 120A | 2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 121 ns | 40 µA @ 600 V | - | Through Hole | TO-247-3 | PG-TO247-3-1 | -55°C ~ 175°C | 6,184 Cart + RFQ |
IDH08G65C5XKSA2 Infineon Technologies | 1 $4.4000 | Datasheet | Silicon Carbide Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 2,313 Cart + RFQ |
IDH09G65C5XKSA2 Infineon Technologies | 1 $4.9500 | Datasheet | Silicon Carbide Schottky | 650 V | 9A | 1.7 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 650 V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 3,644 Cart + RFQ |
AIDW12S65C5XKSA1 Infineon Technologies | 1 $2.1900 | Datasheet | Silicon Carbide Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 363pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C | 6,286 Cart + RFQ |
IDW10G65C5XKSA1 Infineon Technologies | 1 $5.7400 | Datasheet | Silicon Carbide Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C | 4,314 Cart + RFQ |
IDK20G120C5XTMA1 Infineon Technologies | 1 $11.5600 | Datasheet | Silicon Carbide Schottky | 1200 V | 56A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | - | 123 µA @ 1200 V | 1050pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2-1 | -55°C ~ 175°C | 7,703 Cart + RFQ |