Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 931
| Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH10G65C6XKSA1 Infineon Technologies | 1 $5.2000 | Datasheet | Silicon Carbide Schottky | 650 V | 24A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 420 V | 495pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C | 8,569 Cart + RFQ |
IDH08SG60CXKSA2 Infineon Technologies | 1 $5.7600 | Datasheet | Silicon Carbide Schottky | 600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 2,074 Cart + RFQ |
IDK16G120C5XTMA1 Infineon Technologies | 1 $9.0500 | Datasheet | Silicon Carbide Schottky | 1200 V | 40A | 1.95 V @ 16 A | No Recovery Time > 500mA (Io) | - | 80 µA @ 1200 V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2-1 | -55°C ~ 175°C | 3,855 Cart + RFQ |
IDH12G65C6XKSA1 Infineon Technologies | 1 $6.1100 | Datasheet | Silicon Carbide Schottky | 650 V | 27A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 420 V | 594pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C | 9,592 Cart + RFQ |
IDH10G120C5XKSA1 Infineon Technologies | 1 $1.0000 | Datasheet | Silicon Carbide Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 1200 V | 525pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 9,427 Cart + RFQ |
IDH16G65C5XKSA2 Infineon Technologies | 1 $7.7800 | Datasheet | Silicon Carbide Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 3,850 Cart + RFQ |
IDWD20G120C5XKSA1 Infineon Technologies | 1 $12.3400 | Datasheet | Silicon Carbide Schottky | 1200 V | 62A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 166 µA @ 1200 V | 1368pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C | 7,937 Cart + RFQ |
DZ600N12KHPSA1 Infineon Technologies | 1 $222.9500 | Datasheet | Standard | 1200 V | 735A | 1.4 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1200 V | - | Chassis Mount | Module | Module | -40°C ~ 150°C | 3,922 Cart + RFQ |
BAS1603WE6327HTSA1 Infineon Technologies | 1 $0.1384 | Datasheet | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | PG-SOD323-2 | 150°C (Max) | 100,000 Cart + RFQ |
IDD03SG60CXTMA2 Infineon Technologies | 1 $2.2700 | Datasheet | Silicon Carbide Schottky | 600 V | 3A | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C | 1,725 Cart + RFQ |
IDDD04G65C6XTMA1 Infineon Technologies | 1 $2.5300 | Datasheet | Silicon Carbide Schottky | 650 V | 13A | - | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 420 V | 205pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C | 9,153 Cart + RFQ |
IDV20E65D1XKSA1 Infineon Technologies | 1 $1.4600 | Datasheet | Standard | 650 V | 28A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -40°C ~ 175°C | 2,408 Cart + RFQ |
IDP15E65D1XKSA1 Infineon Technologies | 1 $0.6900 | Datasheet | Standard | 650 V | 15A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 114 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C | 8,394 Cart + RFQ |
IDK06G65C5XTMA2 Infineon Technologies | 1 $3.2800 | Datasheet | Silicon Carbide Schottky | 650 V | 6A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C | 7,248 Cart + RFQ |
IDH03G65C5XKSA2 Infineon Technologies | 1 $2.1100 | Datasheet | Silicon Carbide Schottky | 650 V | 3A | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 100pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 9,241 Cart + RFQ |
IDW30E65D1FKSA1 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 650 V | 60A | 1.7 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3-1 | -40°C ~ 175°C | 3,884 Cart + RFQ |
IDV30E65D2XKSA1 Infineon Technologies | 1 $2.5600 | Datasheet | Standard | 650 V | 30A | 2.2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -40°C ~ 175°C | 1,553 Cart + RFQ |
IDH02G120C5XKSA1 Infineon Technologies | 1 $1.3800 | Datasheet | Silicon Carbide Schottky | 1200 V | 2A | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 182pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | 175°C (Max) | 6,784 Cart + RFQ |
IDK10G120C5XTMA1 Infineon Technologies | 1 $6.2400 | Datasheet | Silicon Carbide Schottky | 1200 V | 31.9A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 18 µA @ 1200 V | 525pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2-1 | -55°C ~ 175°C | 7,141 Cart + RFQ |
IDH12G65C5XKSA2 Infineon Technologies | 1 $6.5300 | Datasheet | Silicon Carbide Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 8,432 Cart + RFQ |