
Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 931
Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() D1600U45X122XPSA1 Infineon Technologies | 1 $1.0000 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 2,150 Cart + RFQ |
![]() BAT165E6327HTSA1 Infineon Technologies | 1 $1.0385 100 $0.8308 500 $0.6923 | Datasheet | Schottky | 40 V | 750mA | 740 mV @ 750 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 40 V | 12pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | PG-SOD323-2 | 150°C (Max) | 2 Cart + RFQ |
![]() IDM02G120C5XTMA1 Infineon Technologies | 1 $2.6900 | Datasheet | Silicon Carbide Schottky | 1200 V | 2A | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 182pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C | 9,775 Cart + RFQ |
![]() IDL08G65C5XUMA2 Infineon Technologies | 1 $4.3300 | Datasheet | Silicon Carbide Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C | 7,959 Cart + RFQ |
![]() IDM10G120C5XTMA1 Infineon Technologies | 1 $5.9200 | Datasheet | Silicon Carbide Schottky | 1200 V | 38A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 12 V | 29pF @ 800V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 150°C | 9,519 Cart + RFQ |
![]() IDW75D65D1XKSA1 Infineon Technologies | 1 $4.8000 | Datasheet | Standard | 650 V | 150A | 1.7 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 108 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C | 3,625 Cart + RFQ |
![]() IDH12SG60CXKSA2 Infineon Technologies | 1 $7.6800 | Datasheet | Silicon Carbide Schottky | 600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 7,230 Cart + RFQ |
![]() IDW40G65C5XKSA1 Infineon Technologies | 1 $17.7300 | Datasheet | Silicon Carbide Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 1140pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C | 6,618 Cart + RFQ |
![]() SMBD914E6327HTSA1 Infineon Technologies | 1 $0.3400 | Datasheet | Standard | 100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 | 150°C (Max) | 4,443 Cart + RFQ |
![]() MMBD914LT1HTSA1 Infineon Technologies | 1 $0.3500 | Datasheet | Standard | 100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 | 150°C (Max) | 6,062 Cart + RFQ |
![]() BAS1602VH6327XTSA1 Infineon Technologies | 1 $0.1384 | Datasheet | Standard | 80 V | 200mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) | 100,000 Cart + RFQ |
![]() BAS21E6327HTSA1 Infineon Technologies | 1 $0.3700 | Datasheet | Standard | 200 V | 250mA | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 | 150°C (Max) | 8,497 Cart + RFQ |
![]() BAS116E6327HTSA1 Infineon Technologies | 1 $0.3700 | Datasheet | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 nA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 | 150°C (Max) | 6,182 Cart + RFQ |
![]() BAT64E6327HTSA1 Infineon Technologies | 1 $0.4284 | Datasheet | Schottky | 40 V | 120mA | 750 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 30 V | 6pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 | 150°C (Max) | 100,000 Cart + RFQ |
![]() IDB30E120ATMA1 Infineon Technologies | 1 $2.4300 | Datasheet | Standard | 1200 V | 50A | 2.15 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 243 ns | 100 µA @ 1200 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -55°C ~ 150°C | 8,561 Cart + RFQ |
![]() IDP20E65D2XKSA1 Infineon Technologies | 1 $1.7500 | Datasheet | Standard | 650 V | 40A | 2.2 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 32 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C | 3,475 Cart + RFQ |
![]() IDH06G65C6XKSA1 Infineon Technologies | 1 $3.1500 | Datasheet | Silicon Carbide Schottky | 650 V | 16A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 420 V | 302pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C | 5,810 Cart + RFQ |
![]() IDW40E65D2FKSA1 Infineon Technologies | 1 $3.2100 | Datasheet | Standard | 650 V | 80A | 2.3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3-1 | -40°C ~ 175°C | 5,057 Cart + RFQ |
![]() IDP30E120XKSA1 Infineon Technologies | 1 $3.2800 | Datasheet | Standard | 1200 V | 50A | 2.15 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 243 ns | 100 µA @ 1200 V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C | 6,858 Cart + RFQ |
![]() IDH08G120C5XKSA1 Infineon Technologies | 1 $1.0000 | Datasheet | Silicon Carbide Schottky | 1200 V | 8A | 1.95 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 3,894 Cart + RFQ |