Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 931
ProductPricingDatasheetDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - JunctionStock & Quantity
BAS16WE6433HTMA1
Infineon Technologies
1
$0.1384
Datasheet
Standard80 V250mA1.25 V @ 150 mAFast Recovery =< 500ns, > 200mA (Io)4 ns1 µA @ 75 V2pF @ 0V, 1MHzSurface MountSC-70, SOT-323PG-SOT323150°C (Max)
100,000
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BAS5202VE6127XT
Infineon Technologies
Datasheet
Schottky45 V750mA600 mV @ 200 mAFast Recovery =< 500ns, > 200mA (Io)-10 µA @ 45 V10pF @ 10V, 1MHzSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
2,743
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BAS 52-02V E6327
Infineon Technologies
Datasheet
Schottky45 V750mA600 mV @ 200 mAFast Recovery =< 500ns, > 200mA (Io)-10 µA @ 45 V10pF @ 10V, 1MHzSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
8,217
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BAS 70-02W E6327
Infineon Technologies
Datasheet
Schottky70 V70mA1 V @ 15 mASmall Signal =< 200mA (Io), Any Speed100 ps100 nA @ 50 V2pF @ 0V, 1MHzSurface MountSC-80SCD-80-55°C ~ 125°C
4,857
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BAT 60B E6433
Infineon Technologies
Datasheet
Schottky10 V3A600 mV @ 1 AFast Recovery =< 500ns, > 200mA (Io)-25 µA @ 8 V30pF @ 5V, 1MHzSurface MountSC-76, SOD-323PG-SOD323-2150°C (Max)
7,633
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BAT 64-02W E6327
Infineon Technologies
Datasheet
Schottky40 V120mA750 mV @ 100 mASmall Signal =< 200mA (Io), Any Speed5 ns2 µA @ 30 V6pF @ 1V, 1MHzSurface MountSC-80SCD-80150°C (Max)
4,594
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IDH04S60CAKSA1
Infineon Technologies
1
$1.5200
Datasheet
Silicon Carbide Schottky600 V4A1.9 V @ 4 ANo Recovery Time > 500mA (Io)0 ns50 µA @ 600 V130pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
8,071
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IDH05S60CAKSA1
Infineon Technologies
Datasheet
Silicon Carbide Schottky600 V5A1.7 V @ 5 ANo Recovery Time > 500mA (Io)0 ns70 µA @ 600 V240pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
7,573
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IDH06S60CAKSA1
Infineon Technologies
1
$2.0500
Datasheet
Silicon Carbide Schottky600 V6A1.7 V @ 6 ANo Recovery Time > 500mA (Io)0 ns80 µA @ 600 V280pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
3,655
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IDH08S60CAKSA1
Infineon Technologies
1
$1.0000
Datasheet
Silicon Carbide Schottky600 V8A1.7 V @ 8 ANo Recovery Time > 500mA (Io)0 ns100 µA @ 600 V310pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
3,554
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IDH10S60CAKSA1
Infineon Technologies
1
$3.7100
Datasheet
Silicon Carbide Schottky600 V10A1.7 V @ 10 ANo Recovery Time > 500mA (Io)0 ns140 µA @ 600 V480pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
5,807
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IDH12S60CAKSA1
Infineon Technologies
Datasheet
Silicon Carbide Schottky600 V12A1.7 V @ 12 ANo Recovery Time > 500mA (Io)0 ns160 µA @ 600 V530pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
8,374
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IDH16S60CAKSA1
Infineon Technologies
Datasheet
Silicon Carbide Schottky600 V16A1.7 V @ 16 ANo Recovery Time > 500mA (Io)0 ns200 µA @ 600 V650pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
5,449
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MMBD914LT3HTMA1
Infineon Technologies
Datasheet
Standard100 V250mA1.25 V @ 150 mAFast Recovery =< 500ns, > 200mA (Io)4 ns100 nA @ 75 V2pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3PG-SOT23150°C (Max)
1,124
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SDB06S60
Infineon Technologies
Datasheet
Silicon Carbide Schottky600 V6A1.7 V @ 6 ANo Recovery Time > 500mA (Io)0 ns200 µA @ 600 V300pF @ 0V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO220-3-45-55°C ~ 175°C
6,271
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SDD04S60
Infineon Technologies
Datasheet
Silicon Carbide Schottky600 V4A1.9 V @ 4 ANo Recovery Time > 500mA (Io)0 ns200 µA @ 600 V150pF @ 0V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63PG-TO252-3-11-55°C ~ 175°C
8,986
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SDP10S30
Infineon Technologies
Datasheet
Silicon Carbide Schottky300 V10A1.7 V @ 10 ANo Recovery Time > 500mA (Io)0 ns200 µA @ 300 V600pF @ 0V, 1MHzThrough HoleTO-220-3PG-TO220-3-55°C ~ 175°C
7,119
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SDT05S60
Infineon Technologies
1
$2.8500
Datasheet
Silicon Carbide Schottky600 V5A1.7 V @ 5 ANo Recovery Time > 500mA (Io)0 ns200 µA @ 600 V170pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
7,634
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SDT08S60
Infineon Technologies
1
$4.7200
Datasheet
Silicon Carbide Schottky600 V8A1.7 V @ 8 ANo Recovery Time > 500mA (Io)0 ns300 µA @ 600 V280pF @ 0V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
6,814
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SDT10S60
Infineon Technologies
Datasheet
Silicon Carbide Schottky600 V10A1.7 V @ 10 ANo Recovery Time > 500mA (Io)0 ns350 µA @ 600 V350pF @ 0V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
1,171
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