Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 931
| Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH10G65C5XKSA2 Infineon Technologies | 1 $5.4700 | Datasheet | Silicon Carbide Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 1,507 Cart + RFQ |
IDW16G65C5XKSA1 Infineon Technologies | 1 $8.1600 | Datasheet | Silicon Carbide Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C | 7,411 Cart + RFQ |
AIDW30S65C5XKSA1 Infineon Technologies | 1 $9.9300 | Datasheet | Silicon Carbide Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C | 8,282 Cart + RFQ |
IDH20G120C5XKSA1 Infineon Technologies | 1 $11.4900 | Datasheet | Silicon Carbide Schottky | 1200 V | 56A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 123 µA @ 1200 V | 1050pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C | 4,001 Cart + RFQ |
IDW40G65C5XKSA1 Infineon Technologies | 1 $9.7900 | Datasheet | Silicon Carbide Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 1140pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C | 5,531 Cart + RFQ |
BAW78DE6327HTSA1 Infineon Technologies | Datasheet | Standard | 400 V | 1A | 1.6 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1 µs | 1 µA @ 400 V | 10pF @ 0V, 1MHz | Surface Mount | TO-243AA | PG-SOT89 | 150°C (Max) | 3,652 Cart + RFQ | |
SDP06S60 Infineon Technologies | 1 $1.0000 | Datasheet | Silicon Carbide Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | Through Hole | TO-220-3 | PG-TO220-3-1 | -55°C ~ 175°C | 4,535 Cart + RFQ |
SDT04S60 Infineon Technologies | Datasheet | Silicon Carbide Schottky | 600 V | 4A | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 150pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C | 2,868 Cart + RFQ | |
SDT06S60 Infineon Technologies | Datasheet | Silicon Carbide Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C | 8,008 Cart + RFQ | |
SDT10S30 Infineon Technologies | 1 $1.0000 | Datasheet | Silicon Carbide Schottky | 300 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C | 3,438 Cart + RFQ |
SDT12S60 Infineon Technologies | Datasheet | Silicon Carbide Schottky | 600 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 450pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C | 1,167 Cart + RFQ | |
BAS16B5003 Infineon Technologies | 1 $0.1384 | Datasheet | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-11 | 150°C | 100,000 Cart + RFQ |
BAW56B5000 Infineon Technologies | 1 $0.2400 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 100,000 Cart + RFQ |
BAT54B5000 Infineon Technologies | 1 $0.7260 | Datasheet | Schottky | 30 V | 200mA | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-11 | 150°C | 100,000 Cart + RFQ |
BAS16B5000 Infineon Technologies | 1 $0.1384 | Datasheet | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-11 | 150°C | 100,000 Cart + RFQ |
BAS16WE6327 Infineon Technologies | 1 $0.1384 | Datasheet | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3-1 | 150°C | 100,000 Cart + RFQ |
BAS70-02W E6327 Infineon Technologies | 1 $0.0200 | Datasheet | Schottky | 70 V | 70mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | 100 ps | 100 nA @ 50 V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-80 | PG-SCD80-2 | 150°C | 9,789 Cart + RFQ |
BAT54B5003 Infineon Technologies | 1 $0.7260 | Datasheet | - | - | - | - | - | - | - | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23 | - | 100,000 Cart + RFQ |
BAS 16-02V E6327 Infineon Technologies | Datasheet | Standard | 80 V | 200mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) | 5,587 Cart + RFQ | |
BAS 16-02W E6327 Infineon Technologies | Datasheet | Standard | 80 V | 200mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | 150°C (Max) | 6,252 Cart + RFQ |