Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 931
| Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
D1721NH90TAOSA1 Infineon Technologies | 1 $2.0000 | Datasheet | Standard | - | 2160A | - | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 9000 V | - | Chassis Mount | DO-200, Variant | BG-D10026K-1 | 0°C ~ 140°C | 8,235 Cart + RFQ |
D6001N50TXPSA1 Infineon Technologies | 1 $2.0000 | Datasheet | Standard | 5000 V | 8010A | 1.3 V @ 6000 A | Standard Recovery >500ns, > 200mA (Io) | - | 400 mA @ 5000 V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C | 7,735 Cart + RFQ |
BAS140WE6327 Infineon Technologies | Datasheet | Schottky | 40 V | 120mA | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | 100 ps | 1 µA @ 30 V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | PG-SOD323-2 | -55°C ~ 150°C | 3,893 Cart + RFQ | |
BAT165 Infineon Technologies | 1 $1.0385 100 $0.8308 500 $0.6923 | Datasheet | Schottky | 40 V | 750mA | 740 mV @ 750 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | - | 12pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | PG-SOD323-2 | 150°C (Max) | 10 Cart + RFQ |
IDP30E60 Infineon Technologies | Datasheet | Standard | 600 V | 52.3A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 126 ns | 50 µA @ 600 V | - | Through Hole | TO-220-2 | PG-TO220-2 | -40°C ~ 175°C | 1,075 Cart + RFQ | |
BAT165E6327 Infineon Technologies | 1 $2.7692 | Datasheet | Schottky | 40 V | 750mA | 740 mV @ 750 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | - | 12pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | PG-SOD323-2 | 150°C (Max) | 100,000 Cart + RFQ |
IDW50E60 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 600 V | 80A | 2 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 40 µA @ 600 V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C | 7,578 Cart + RFQ |
IDD05SG60C Infineon Technologies | Datasheet | Silicon Carbide Schottky | 600 V | 5A | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C | 1,687 Cart + RFQ | |
IDP12E120XKSA1390 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 1200 V | 28A | 2.15 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 100 µA @ 1200 V | - | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 150°C | 4,586 Cart + RFQ |
IDW40E65D1 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 650 V | 80A | 1.7 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 129 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3-1 | -40°C ~ 175°C | 3,055 Cart + RFQ |
IDH10SG60C Infineon Technologies | 1 $1.0000 | Datasheet | Silicon Carbide Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C | 2,810 Cart + RFQ |
IDW40E65D2 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 650 V | 80A | 2.3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 40 µA @ 650 V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C | 4,121 Cart + RFQ |
IDP15E65D1 Infineon Technologies | 1 $1.0000 | Datasheet | Standard | 650 V | 30A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 114 ns | 40 µA @ 650 V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C | 2,346 Cart + RFQ |
IDW12G65C5 Infineon Technologies | 1 $1.0000 | Datasheet | Silicon Carbide Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C | 9,900 Cart + RFQ |
IDP45E60XKSA2 Infineon Technologies | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | 3,164 Cart + RFQ | |
IDW10G65C5XKSA1 Infineon Technologies | Datasheet | Silicon Carbide Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C | 5,422 Cart + RFQ | |
IDH05G65C5XKSA2 Infineon Technologies | Datasheet | Silicon Carbide Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 160pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C | 7,879 Cart + RFQ | |
IDH05G65C5XKSA1 Infineon Technologies | Datasheet | Silicon Carbide Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 160pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C | 5,480 Cart + RFQ | |
IDW30E60AFKSA1 Infineon Technologies | Datasheet | Standard | 600 V | 60A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 143 ns | 40 µA @ 600 V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C | 7,294 Cart + RFQ | |
IDWD15G120C5XKSA1 Infineon Technologies | Datasheet | Silicon Carbide Schottky | 1200 V | 49A | 1.65 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 124 µA @ 1200 V | 1050pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C | 3,289 Cart + RFQ |